PART |
Description |
Maker |
IXGN60N60 |
Ultra-Low VCE(sat) IGBT IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
IXYS[IXYS Corporation]
|
PBSS5120T PBSS5120T215 |
20 V; 1 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 20 V, 1 A PNP low VCEsat (BISS) transistor 20 V 1 A PNP low VCEsat (BISS) transistor
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
IXGH38N60 |
Ultra-Low VCE(sat) IGBT(1.8V超低VCE(sat)的绝缘栅双极晶体 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
PBSS5230T PBSS5220T PBSS5220T215 |
20V, 2A PNP low VCEsat (BISS) transistor 20 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
IXGH31N60U1 |
Ultra-Low VCE(sat) IGBT with Diode
|
IXYS[IXYS Corporation]
|
PBSS4032PT PBSS4032PT-215 |
30 V, 2.4 A PNP low VCEsat (BISS) transistor 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 ?18 December 2009
|
NXP Semiconductors
|
SGF23N60UFD SGF23N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 23 A, 600 V, N-CHANNEL IGBT Ultra-Fast IGBT Discrete, High Performance IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
STGWA45HF60WDI STGW45HF60WDI |
45 A, 600 V ultra fast IGBT with low drop diode
|
http:// STMicroelectronics
|
BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
GA200TS60U |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
|
IRF[International Rectifier]
|
IRG4BC30UDPBF IRG4BC30UDPBF-15 |
23 A, 600 V, N-CHANNEL IGBT, TO-220AB ULTRA FAST COPACK IGBT
|
International Rectifier
|